Coherent LO phonons generated by high-velocity electrons in two-dimensional channels and their impact on carrier transport

S. Komirenko, K.W. Kim, V. Kochelap, M. Stroscio
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引用次数: 1

Abstract

We show that Cerenkov generation of confined LO phonons by drifting electrons can be achieved in biased quantum wells (QWs). Both linear and nonlinear regimes of phonon generation are analyzed. The kinetic parameters of the drifting electrons are estimated by using momentum and energy balance equations for electron scattering by the confined optical phonons. Our findings suggest that high efficiency electrical generation of coherent optical phonons can be realized in two-dimensional structures with high drift velocities, such as AlAs/GaAs/AlAs and GaSb/InSb/GaSb QWs. Due to high conversion efficiency, the effect of current driven phonon generation can be an important mechanism of current suppression in two-dimensional channels where its contribution to saturation of current-voltage characteristics can compete with the contribution of intervalley transitions.
二维通道中高速电子产生的相干LO声子及其对载流子输运的影响
我们证明了在偏置量子阱(QWs)中可以实现由漂移电子产生的受限LO声子的切伦科夫生成。分析了声子产生的线性和非线性机制。利用受限光学声子散射电子的动量和能量平衡方程,估计了漂移电子的动力学参数。我们的研究结果表明,在具有高漂移速度的二维结构中,如AlAs/GaAs/AlAs和GaSb/InSb/GaSb量子阱中,可以实现相干光学声子的高效发电。由于转换效率高,电流驱动声子产生的效应可以成为二维通道中电流抑制的重要机制,其对电流-电压特性饱和的贡献可以与谷间跃迁的贡献相竞争。
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