Foundry RF technologies

P. R. Verma, Z. Shaoqiang, C. K. Wai, Tan Juan Boon, R. Nair
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引用次数: 1

Abstract

Landscape of semiconductor technologies and manufacturing has been changing in general and RF technologies in specific from IDMs to foundries and from exotic III-V compounds to the silicon. Tremendous advantage of RF performance from nanometer technologies, exponential increase in scalability, availability of high resistivity and engineered SOI substrates have opened doors for the convergence of all sorts of RF applications to silicon based RF technologies. Wafer foundries having been in the leading position of silicon based technologies are going to be benefited with this convergence and all design houses will have access to the same with minimal investments. This paper talks about the three major forces which are helping to converge all consumer RF application integrated circuits to total silicon based solutions with minimum form factor.
代工射频技术
半导体技术和制造业的总体格局一直在发生变化,特别是射频技术,从idm到代工厂,从外来的III-V化合物到硅。纳米技术带来的射频性能的巨大优势、可扩展性的指数级增长、高电阻率的可用性和工程SOI基板为各种射频应用向硅基射频技术的融合打开了大门。在硅基技术方面处于领先地位的晶圆代工厂将从这种融合中受益,所有设计公司都将以最小的投资获得相同的技术。本文讨论了有助于将所有消费类射频应用集成电路集成到以最小外形尺寸为基础的全硅解决方案的三大力量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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