Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics Technology

Abstract

Electromigration (EM) tests were performed on NiSi silicide heaters that are part of a photonic micro ring modulator (MRM). Measurement of the temperature kinetics of failure suggests an activation energy close to 2.0eV. Failure analyses confirm Ni migration is the failure mechanism. Reliability limits established by the EM tests combined with characterization of the MRM's temperature response quantifies the tradeoffs between device performance and reliability.