GaN/Inx Ga1-x N/B0.01 Ga0.99 N Double Heterojunction Field Effect Transistor DH-FET for electronics power application.

Abstract

This paper aims to study a GaN/In$_{x} Ga_{1}xN/B_{0.01} Ga_{0.99}$ N Double Heterojunction Field Effect Transistor (DH-FET) by using SILVACO TCAD two and three dimensional device simulator. The structure is based on an undoped In$_{x} Ga_{1} x$ N as channel layer and an undopped back-barrier layer of B$_{x} Ga_{1-x}$N. The thickness of the channel layer has been fixed at 10 nm and we change the indium content in the alloy In$_{x} Ga_{1-x}$N of the channel layer, 10%, 25%, 50%, 75%, and 100% to get a channel layer only with nitride indium (InN). Some DC and AC performances of the transistor are simulated for each indium concentration.The increase of indium concentration in the In$_{x} Ga_{1-x}$N channel significantly improves the performances due to its excellent electrical properties and deep quantum well, and the introduction of resistive material B$_{x} Ga_{1-x}$N as back barrier layer with 1% of boron concentration serves to improve the performances due to better confinement of (2DEG) two dimensional electron gas. With 20 nm gate length, the transistor demonstrates a maximum drain-source current (Ids) of 1.2 A/mm, a maximum transconductance (gm) of 425 mS mm$^{-1}$, a gate-leakage current of 3.10$^{-9}$ A, a cut-off frequency (Ft) of 850 GHz, and a maximum oscillation frequency (Fmax) of 1.5 THz.