Is there a Zero Temperature bias point (ZTC) on Back Enhanced (BE) SOI MOSFET?

Abstract

This paper reports the temperature influence on the Back Enhanced (BE) SOI MOSFET fabricated with two different source/drain contact electrodes: Ohmic and Schottky. The BE SOI MOSFET (Patent BR 102015020974-6, 2015) is a kind of undoped junction-less SOI transistor, which works like an n-type or p-type MOS, depending on the back bias conditions. In spite of the Schottky contact at source/drain is mandatory in order to have both type of transistor working in a similar way, the use of Ohmic contact may present some specials advantages. The results showed the presence of a ZTC (Zero Temperature Coefficient) bias condition only in the device with Ohmic source/drain contact. It was observed that the Schottky contact resistance decreased when the temperature increases resulting in a higher current and consequently the absence of the ZTC. This effect is explained through experimental measurements and simulation.