A 2K×8-bit static RAM

1978 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1978.189428

T. Ohzone, T. Hirao, K. Tsuji, S. Horiuchi, S. Takayanagi

引用次数: 4

Abstract

High density 2K×8-bit fully static RAM has been developed. Memory cell size of 23×27µm results in the chip size of 3.75×4.19mm, which is nearly equal to that of existing 4K-bit static RAM's. High packing density is realized by layout of 3µm photolithography and double-level polysilicon process permitting fabrication of memory load resistors upon driver MOSFET's.

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2K×8位静态RAM

高密度2K×8-bit全静态RAM已经开发。存储单元尺寸为23×27µm，芯片尺寸为3.75×4.19mm，与现有的4k位静态RAM几乎相等。高封装密度是通过3µm光刻和双能级多晶硅工艺的布局实现的，允许在驱动MOSFET上制造记忆负载电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1978 International Electron Devices Meeting

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