Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices

Abstract

A number of devices, that are under investigation for implementing and calibrating physical models at high operating temperatures and transient high current stress, exhibit geometrical features that do not allow for the application of the elementary Hall theory. This makes the outcome of measurements based on the Hall effect unreliable. A more general theory has been developed, that leads to the determination of the Hall voltage as a function of the position along the longitudinal direction of the device channel. Devices with several pairs of Hall probes have been designed and manufactured, and the Hall voltage along their sides has carefully been measured. The experimental results led to a thorough validation of the theory.