Simulation of the Process of Growing Semiconductor Single Crystals by the Czochralski Method

Kirill Suchoruchenkov, Evgenia Maraeva, Olga Alexandrova
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Abstract

The work is devoted to the creation of a virtual instrument in the LabVIEW environment, which makes it possible to simulate the process of growing a crystal depending on technological parameters. As the technological process under consideration, we chose the method of growing single crystals by pulling them up from the spare surface of a large volume of the melt with initiation of the onset of crystallization by introducing a seed crystal (or several crystals) of a given structure and crystallographic orientation, which is in contact with the spare surface of the melt (Czochralski method). The virtual instrument is intended for use by students and teachers in full-time mode and in distance learning.
用Czochralski法生长半导体单晶过程的模拟
本工作致力于在LabVIEW环境中创建一个虚拟仪器,使其能够根据技术参数模拟晶体生长的过程。在考虑的工艺过程中,我们选择了从大量熔体的备用表面拉起单晶的方法,通过引入给定结构和晶体取向的种子晶体(或几个晶体),使其与熔体的备用表面接触,从而引发结晶的开始(Czochralski法)。虚拟仪器的目的是供学生和教师在全日制模式和远程学习中使用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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