Degradation behaviour of electrical properties of inverted metamorphic four-junction (IMM4J) solar cells under 1 MeV electron irradiation

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984864

Zhang Yanqing, Mao Guoliang, Wang Tianqi, Li Chaoming, Huo Mingxue, Qiao Chunhua

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Abstract

In this study, the degradation effects of inverted metamorphic four-junction (IMM4J) solar cells were investigated after 1 MeV electron irradiation using spectral response and electrical property measurements. The results show that, similar to traditional tri-junction (TJ) GaInP/GaAs/Ge solar cells, the electrical properties (such as Isc, Voc, and Pmax) degrade as a function of logφ, where φ represents the electron fluence. In particular, the degradation of Voc is more serious than that of Isc because of the sum rule for Voc and the limit rule for Isc in IMM4J cells. Analysis of the spectral response curves indicates that, unlike traditional TJ cells, the In0.3Ga0.7As (1.0 eV) sub-cell exhibits the most severe damage in the irradiated IMM4J cells and the In0.58Ga0.42As sub-cell becomes a limits part for the electrical properties of the IMM4J solar cells.

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1mev电子辐照下逆变质四结(IMM4J)太阳能电池电性能的退化行为

本文研究了倒置变质四结(IMM4J)太阳能电池在1 MeV电子辐照后的降解效应，并对其进行了光谱响应和电学性能测量。结果表明，与传统的三结(TJ) GaInP/GaAs/Ge太阳能电池类似，电学性能(如Isc, Voc和Pmax)随logφ的变化而降低，其中φ表示电子影响。特别是，由于IMM4J细胞中Voc的总和规则和Isc的极限规则，Voc的降解比Isc的降解更严重。光谱响应曲线分析表明，与传统的TJ电池不同，辐照后的IMM4J电池中，In0.3Ga0.7As (1.0 eV)亚电池损伤最严重，In0.58Ga0.42As亚电池成为影响IMM4J太阳能电池电性能的限制部分。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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