Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering

Abstract

For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.