Si Nano-Crystal Size and Structural Defect Characterization Using Electron Microscopes

Abstract

Si nano-crystals (NCs) based flash memory is less susceptible to charge loss in tunnel oxide, allowing tunnel oxide reduction from ~100A to ~50A and therefore lower operating voltage and improved cycling endurance performance. Most critical parameters controlling Si NCs performance include size, size distribution and optimal area density (#/cm2). Objective of this study includes developing an image processing method for large population of Si NCs characterization, evaluating and comparing different electron microscope imaging techniques and studying Si NCs structural defects.