J. Osth, O. Owais, M. Karlsson, A. Serban, Shaofang Gong
{"title":"Schottky diode as high-speed variable impedance load in six-port modulators","authors":"J. Osth, O. Owais, M. Karlsson, A. Serban, Shaofang Gong","doi":"10.1109/ICUWB.2011.6058924","DOIUrl":null,"url":null,"abstract":"The use of Schottky diodes as high-speed variable impedance loads in six-port modulators are proposed and analyzed in this paper. The impedance dependency of diode parameters and local oscillator power are investigated by theoretical analysis and simulations. A prototype for a direct carrier six-port modulator using Schottky diodes for impedance generation is designed and fabricated for a center frequency of 7.5 GHz. Measurements show good modulation properties when a 16 quadrature amplitude modulation signal at 300 Msymbol/s is generated, i.e., at a data rate of 1.2 Gbit/s, validating the use of Schottky diodes as high-speed variable impedance loads in six-port modulators.","PeriodicalId":143107,"journal":{"name":"2011 IEEE International Conference on Ultra-Wideband (ICUWB)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on Ultra-Wideband (ICUWB)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICUWB.2011.6058924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
The use of Schottky diodes as high-speed variable impedance loads in six-port modulators are proposed and analyzed in this paper. The impedance dependency of diode parameters and local oscillator power are investigated by theoretical analysis and simulations. A prototype for a direct carrier six-port modulator using Schottky diodes for impedance generation is designed and fabricated for a center frequency of 7.5 GHz. Measurements show good modulation properties when a 16 quadrature amplitude modulation signal at 300 Msymbol/s is generated, i.e., at a data rate of 1.2 Gbit/s, validating the use of Schottky diodes as high-speed variable impedance loads in six-port modulators.