K. Nakahara, H. Hatanaka, S. Kura, Y. Suminaga, Y. Hotta, M. Okada, K. Miyata
{"title":"A 64 Mb MROM with good pair selection architecture","authors":"K. Nakahara, H. Hatanaka, S. Kura, Y. Suminaga, Y. Hotta, M. Okada, K. Miyata","doi":"10.1109/ICWSI.1990.63883","DOIUrl":null,"url":null,"abstract":"The needs for high density mask programmable ROM (MROM) have increased rapidly due to the demand for storing the Kanji character fonts and dictionaries used in Japanese word processors. For example, desktop publishing uses MROMs for 80 M bits fixed data. The authors describe a 64 Mb MROM which employs a 'good pair selection' as a type of redundancy technique. Employing the technology a flat cell structure and a bank selection architecture and a 0.8 mu m CMOS process, they have developed high density 64 Mb MROM.<<ETX>>","PeriodicalId":206140,"journal":{"name":"1990 Proceedings. International Conference on Wafer Scale Integration","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 Proceedings. International Conference on Wafer Scale Integration","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICWSI.1990.63883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The needs for high density mask programmable ROM (MROM) have increased rapidly due to the demand for storing the Kanji character fonts and dictionaries used in Japanese word processors. For example, desktop publishing uses MROMs for 80 M bits fixed data. The authors describe a 64 Mb MROM which employs a 'good pair selection' as a type of redundancy technique. Employing the technology a flat cell structure and a bank selection architecture and a 0.8 mu m CMOS process, they have developed high density 64 Mb MROM.<>