Impact of Off State Stress on advanced high-K metal gate NMOSFETs

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948836

A. Spessot, M. Aoulaiche, M. Cho, J. Franco, T. Schram, R. Ritzenthaler, B. Kaczer

引用次数: 10

Abstract

In this work we have investigated the impact of Off State Stress (OSS) on nMOSFETs in High-K/Metal Gate (HKMG) technology. Although in standard poly-SiO2/SiON devices the impact of OSS is relatively limited and causes an increase in VTH, in the case of HKMG larger degradation is observed, with negative VTH shift. A significant increase of the device Off state leakage is observed, causing a serious issue for high voltage and low power oriented circuits.

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关断状态应力对先进高k金属栅nmosfet的影响

在这项工作中，我们研究了关闭状态应力(OSS)对高k /金属栅极(HKMG)技术中nmosfet的影响。虽然在标准的聚sio2 /SiON器件中，OSS的影响相对有限，并导致VTH增加，但在HKMG的情况下，观察到更大的退化，VTH为负偏移。观察到器件关闭状态泄漏的显着增加，导致高压和低功率定向电路的严重问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 44th European Solid State Device Research Conference (ESSDERC)

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