Structural characterization of SiGe/Si dry thermal oxidation

Abstract

In this paper, a study on the dry thermal oxidation of a graded SiGe layer is proposed. By oxidation of a graded SiGe layer, the effect of Ge pileup was reduced and dependence of the oxidation ambient was analyzed. During oxidation at pure oxide ambient, pure compositions of silicon dioxide are formed without dislocation, and it was clearly proved by the TEM, EDS, SE, and AFM results. Whereas, after oxidation under atmospheric pressure with 21/min mix gas flow of Ar50%+O/sub 2/50%, composition of SiGeO/sub 2/ was found at the top layer. This result can propose an oxidation method optimization of SiGe/Si heterostructures.