Advanced HiGT with low-injection punch-through (LiPT) structure [high-conductivity IGBT]

Abstract

This paper describes a new advanced HiGT (high-conductivity IGBT) which is the combination of a low injection (LiPT: low injection punch-through) p-emitter and a planar gate with a hole barrier and punchthrough structure. The experimental results and theoretical discussion of this 4.5 kV advanced HiGT show remarkable low-loss characteristics and strong short-circuit immunity. These results prove for the first time that a hole barrier integrated in a planar IGBT is effective even with LiPT.