Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage

Abstract

The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the usefulness of these devices in analog and RF design. We review the basic process architectures and process building blocks for CBiCMOS. SiGe-pnp versus Si-pnp performance metrics are highlighted followed by a discussion on circuit blocks that benefit from having near matched complementary bipolar transistors.