45nm gate length Bulk/PD-SOI CMOS transistors with low gate leakage current for high speed and low power applications

Abstract

45 nm gate length bulk/PD (partially depleted) SOI transistors, with high performance and ultra-low gate leakage, are presented in this paper. The nFETs and pFETs, operating at Vdd=1.2 V, possess driving currents of 1050 /spl mu/A//spl mu/m and 450 /spl mu/A//spl mu/m, as well as 980 /spl mu/A//spl mu/m and 490 /spl mu/A//spl mu/m at Ioff=20 nA//spl mu/m for bulk and PD-SOI devices respectively. The inversion gate leakage is only 1 A/cm/sup 2/ at Vdd=1.0 V. The robust device performance is quite suitable for both high speed and low operating power applications.