Essential physics of carrier transport in nanoscale MOSFETs

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871193

Mark S. Lundstrom, Z. Ren, S. Datta

引用次数: 560

Abstract

A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined.

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纳米级mosfet中载流子输运的基本物理学

给出了纳米级mosfet中载流子输运的一个简单的物理视图。通过数值模拟说明了弹道输运、散射和离输运、平衡输运和量子输运的作用，并检查了用于器件TCAD的常用方法的局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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