A trench-gate LIGBT structure and two LMCT structures in SOI substrates

Abstract

This paper describes a novel SOI trench-gate Lateral Insulated-Gate Bipolar Transistor (LIGBT) structure which exhibits 2.5 times higher latching current densities than an equivalent, conventional LIGBT. This improvement is achieved by allowing most of the hole current to reach the cathode contact without flowing under the N+ source region. In addition, two Lateral MOS-Controlled Thyristor (LMCT) structures in Silicon-on-Insulator (SOI) substrates are presented. These devices achieve on-state performance which is far superior to that of equivalent LIGBT devices, and switching speeds which are nearly equivalent to the LIGBT. The two LMCT configurations are compared in terms of their Maximum Controllable Current (MCC), which exceeds 100 A/cm/sup 2/ for some configurations.