{"title":"Low power SRAM design using charge sharing technique","authors":"Gu Ming, Yang Jun, Xue Jun","doi":"10.1109/ICASIC.2005.1611260","DOIUrl":null,"url":null,"abstract":"This paper describes a low-power write scheme by adopting charge sharing technique. By reducing the bit lines voltage swing, the bit lines dynamic power is reduced. The memory cell's static noise margin (SNM) is discussed to prove it is a feasible scheme. Simulation results show compare to conventional SRAM, in write cycle this SRAM saves more than 20% dynamic power","PeriodicalId":431034,"journal":{"name":"2005 6th International Conference on ASIC","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 6th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2005.1611260","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
This paper describes a low-power write scheme by adopting charge sharing technique. By reducing the bit lines voltage swing, the bit lines dynamic power is reduced. The memory cell's static noise margin (SNM) is discussed to prove it is a feasible scheme. Simulation results show compare to conventional SRAM, in write cycle this SRAM saves more than 20% dynamic power