The investigation of recessed channel SOI devices

Abstract

Recessed channel SOI devices were investigated. In this paper, the structure and processing of such devices is described in detail. The characteristics of a SOI MOSFET using recessed channel technology are much better than normal thick non-depleted and thin-film fully depleted SOI MOSFETs. The 0.15/spl sim/4.0 /spl mu/m recessed channel SOI MOSFETs with a silicon channel film of 70 nm and a source/drain silicon film of 160 nm are developed using a submicron process. The transconductance and drain current are increased by 40% more than thin-film fully depleted SOI MOSFETs.