A 14-V high speed driver in 5-V-only 0.35-/spl mu/m standard CMOS

D. Killat, O. Salzmann, A. Baumgaertner
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引用次数: 1

Abstract

A high-voltage and high-speed driver, using only 5-V and 3.3-V technology features in 0.35-/spl mu/m standard CMOS, is presented. The pull-up function is performed by cascaded 5-V PMOS; a 5-V CMOS compatible gate-shifted LDD NMOS performs the pull-down. The maximum continuous operating voltage is 14 V. The driver is suitable for inductive and capacitive loads. An external MOSFET with 1 nF gate capacitance is fully switched in 200 ns, the peak current that the driver delivers is more than 100 mA. The area of the driver including pad is 0.18 mm/sup 2/. The paper discusses characteristics and lifetime of the driver transistors, design trade-offs, and presents simulations, measurement results and statistical data.
一个14v高速驱动器在5v仅0.35-/spl mu/m标准CMOS
提出了一种仅利用5v和3.3 v技术特性的0.35-/spl mu/m标准CMOS高压高速驱动器。上拉功能由级联的5-V PMOS完成;一个5v CMOS兼容的门移LDD NMOS执行下拉。最大连续工作电压为14v。驱动器适用于电感和电容负载。一个具有1nf栅极电容的外部MOSFET在200ns内完全开关,驱动器提供的峰值电流超过100ma。驱动器包括垫的面积为0.18 mm/sup 2/。本文讨论了驱动晶体管的特性和寿命、设计权衡,并给出了仿真、测量结果和统计数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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