Analysis of GaSb-InAs Gate all around (GAA) p-i-n tunnel FET (TFET) for application as a bio-sensor

Abstract

The paper investigates the role of hetero Junction (HJ) GAA p-i-n TFET architecture for biosensing applications. The device offers better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage and drain current. Analytical modeling scheme is based the exact resultant solution of two-dimensional Poisson equation.