A 2GHz 65nm CMOS digitally-tuned BAW oscillator

Pierre Guillot, P. Philippe, C. Berland, J. Bercher
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引用次数: 5

Abstract

The design of a 2GHz reference frequency oscillator in a 65nm CMOS process using a Bulk Acoustic Wave resonator is presented. The oscillator implements digital frequency control using a switched capacitor bank in parallel to the resonator. The tuning range is up to 4MHz with a minimum step of 1.6kHz. The oscillator core is designed to reach low phase noise (-128dBc/Hz at 100kHz offset) at low power consumption (0.9mW) using a differential topology. It is followed by a low noise divider for output at 500MHz with a phase noise of -140dBc/Hz at 100kHz offset.
2GHz 65nm CMOS数字调谐BAW振荡器
提出了一种基于体声波谐振器的65纳米CMOS工艺中2GHz参考频率振荡器的设计。振荡器使用与谐振器并联的开关电容组实现数字频率控制。调谐范围高达4MHz,最小步进为1.6kHz。该振荡器核心设计采用差分拓扑,在低功耗(0.9mW)下达到低相位噪声(100kHz偏移时-128dBc/Hz)。其次是500MHz输出的低噪声分压器,在100kHz偏移时相位噪声为-140dBc/Hz。
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