Numerical study on nanowire tunnel FET with dynamic threshold operation architecture

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628211

Aixi Zhang, Jin He, Xiaoan Zhu, Yue Hu, Hao Wang, W. Deng, Hongyu He, Ying Zhu, Xiangyu Zhang, M. Chan

引用次数: 1

Abstract

In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.

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具有动态阈值运算结构的纳米线隧道场效应管的数值研究

本文提出了一种具有动态阈值运算结构的纳米线隧道场效应晶体管(DT-NTFET)，并对其特性进行了数值研究。结果表明，DT工作时，DT- ntfet可以通过改变调节栅极电压灵活地选择阈值电压(VT)，从而可以在未来的电路设计中作为多功能器件应用;在共模工作时，其亚阈值摆幅(SS)变陡，驱动电流增强，但不损失关断电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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