Thermal design and simulation analysis of GaN based MPS switching diode

Wu Siwei, Z. Jianhua, Yang Lianqiao, Wu Xing-yang, Yin Luqiao
{"title":"Thermal design and simulation analysis of GaN based MPS switching diode","authors":"Wu Siwei, Z. Jianhua, Yang Lianqiao, Wu Xing-yang, Yin Luqiao","doi":"10.1109/SSLCHINA.2016.7804353","DOIUrl":null,"url":null,"abstract":"Merged PiN/Schottky power (hereinafter referred to as MPS) switching diode has the advantages of high blocking voltage, low leakage current, high switching speed, high current, low voltage and so on. Based on the above advantages, in modern society, the power of MPS switching diode is getting larger and larger, which is used in many fields, and almost all electrical energy converts into heat, so that the chip junction temperature rises rapidly, when the temperature exceeds the maximum allowable temperature, the MPS power switching diode will be damaged due to overheating, so heat dissipation is the key problem for MPS package. In this study, the heat sink is installed under the MPS diode, so heat can be exchanged with the surrounding environment by adopting to forced convection, and combined with high thermal conductivity material as insulating layer of the MPS diode substrate, so the heat generated can be dissipated in a timely manner. In this paper, aiming at the heat characteristics of high power MPS switching diode, a three-dimensional model of the MPS power switching diode is constructed by using three-dimensional drawing software Solid-Works. The diamond like carbon (DLC) film and aluminum oxide (Al2O3) film are respectively used as the insulating layers of the substrate, and the thermal analysis is carried out by ANSYS. Through changing the forced convection coefficient on the surface of the radiator, the relationship between the different convection coefficient and the maximum temperature of the device is obtained. In addition to thermal analysis, the temperature distribution of the device is obtained by infrared thermal imaging instrument test method.","PeriodicalId":413080,"journal":{"name":"2016 13th China International Forum on Solid State Lighting (SSLChina)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th China International Forum on Solid State Lighting (SSLChina)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLCHINA.2016.7804353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Merged PiN/Schottky power (hereinafter referred to as MPS) switching diode has the advantages of high blocking voltage, low leakage current, high switching speed, high current, low voltage and so on. Based on the above advantages, in modern society, the power of MPS switching diode is getting larger and larger, which is used in many fields, and almost all electrical energy converts into heat, so that the chip junction temperature rises rapidly, when the temperature exceeds the maximum allowable temperature, the MPS power switching diode will be damaged due to overheating, so heat dissipation is the key problem for MPS package. In this study, the heat sink is installed under the MPS diode, so heat can be exchanged with the surrounding environment by adopting to forced convection, and combined with high thermal conductivity material as insulating layer of the MPS diode substrate, so the heat generated can be dissipated in a timely manner. In this paper, aiming at the heat characteristics of high power MPS switching diode, a three-dimensional model of the MPS power switching diode is constructed by using three-dimensional drawing software Solid-Works. The diamond like carbon (DLC) film and aluminum oxide (Al2O3) film are respectively used as the insulating layers of the substrate, and the thermal analysis is carried out by ANSYS. Through changing the forced convection coefficient on the surface of the radiator, the relationship between the different convection coefficient and the maximum temperature of the device is obtained. In addition to thermal analysis, the temperature distribution of the device is obtained by infrared thermal imaging instrument test method.
GaN基MPS开关二极管的热设计与仿真分析
合并PiN/肖特基功率(以下简称MPS)开关二极管具有阻断电压高、漏电流小、开关速度快、电流大、电压低等优点。基于上述优点,在现代社会中,MPS开关二极管的功率越来越大,应用于很多领域,几乎所有的电能都转化为热能,使芯片结温迅速上升,当温度超过最高允许温度时,MPS功率开关二极管就会因过热而损坏,因此散热是MPS封装的关键问题。本研究将散热器安装在MPS二极管下方,采用强制对流的方式与周围环境进行热量交换,并结合高导热材料作为MPS二极管衬底的绝缘层,将产生的热量及时散发出去。本文针对大功率MPS开关二极管的热特性,利用三维绘图软件Solid-Works建立了MPS开关二极管的三维模型。采用类金刚石(DLC)薄膜和氧化铝(Al2O3)薄膜分别作为衬底的绝缘层,并利用ANSYS进行热分析。通过改变散热器表面的强制对流系数,得到不同对流系数与设备最高温度之间的关系。除了热分析外,还通过红外热成像仪测试方法获得了器件的温度分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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