High-current, small parasitic capacitance MOS FET on a poly-Si interlayered (PSI: /spl Psi/) SOI wafer

Abstract

An ultra-thin SOI MOSFET capable of operations at a current 1.5 times that of conventional deep sub-micron devices at low voltage is presented. This device is fabricated by a conventional MOS process on novel multi-layered SOI wafers.