{"title":"A new low voltage bandgap reference topology","authors":"M. Isikhan, T. Reich, A. Richter, E. Hennig","doi":"10.1109/ICECS.2009.5410966","DOIUrl":null,"url":null,"abstract":"A new low voltage bandgap voltage reference circuit topology is proposed and analyzed and simulation results are presented in this paper. The conventional topologies for low voltage bandgap reference applications require an Op-Amp as the feedback amplifier. The new topology utilizes a self-biasing transresistance amplifier structure with a reduced current consumption for this purpose. Two circuit versions with the proposed topology are designed with a 0.18 µm standard CMOS technology for minimum supply voltages of 1.2 V and 1.5 V respectively. Simulation results prove that for a bandgap reference voltage (VBG) of 823 mV and temperature range from −40 °C to 125 °C; dc PSRR of 71 dB, maximum Temperature Coefficient of 12.5 ppm/K and current consumption of 33 µA are obtained.","PeriodicalId":343974,"journal":{"name":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2009.5410966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A new low voltage bandgap voltage reference circuit topology is proposed and analyzed and simulation results are presented in this paper. The conventional topologies for low voltage bandgap reference applications require an Op-Amp as the feedback amplifier. The new topology utilizes a self-biasing transresistance amplifier structure with a reduced current consumption for this purpose. Two circuit versions with the proposed topology are designed with a 0.18 µm standard CMOS technology for minimum supply voltages of 1.2 V and 1.5 V respectively. Simulation results prove that for a bandgap reference voltage (VBG) of 823 mV and temperature range from −40 °C to 125 °C; dc PSRR of 71 dB, maximum Temperature Coefficient of 12.5 ppm/K and current consumption of 33 µA are obtained.