A new low voltage bandgap reference topology

M. Isikhan, T. Reich, A. Richter, E. Hennig
{"title":"A new low voltage bandgap reference topology","authors":"M. Isikhan, T. Reich, A. Richter, E. Hennig","doi":"10.1109/ICECS.2009.5410966","DOIUrl":null,"url":null,"abstract":"A new low voltage bandgap voltage reference circuit topology is proposed and analyzed and simulation results are presented in this paper. The conventional topologies for low voltage bandgap reference applications require an Op-Amp as the feedback amplifier. The new topology utilizes a self-biasing transresistance amplifier structure with a reduced current consumption for this purpose. Two circuit versions with the proposed topology are designed with a 0.18 µm standard CMOS technology for minimum supply voltages of 1.2 V and 1.5 V respectively. Simulation results prove that for a bandgap reference voltage (VBG) of 823 mV and temperature range from −40 °C to 125 °C; dc PSRR of 71 dB, maximum Temperature Coefficient of 12.5 ppm/K and current consumption of 33 µA are obtained.","PeriodicalId":343974,"journal":{"name":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2009.5410966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

A new low voltage bandgap voltage reference circuit topology is proposed and analyzed and simulation results are presented in this paper. The conventional topologies for low voltage bandgap reference applications require an Op-Amp as the feedback amplifier. The new topology utilizes a self-biasing transresistance amplifier structure with a reduced current consumption for this purpose. Two circuit versions with the proposed topology are designed with a 0.18 µm standard CMOS technology for minimum supply voltages of 1.2 V and 1.5 V respectively. Simulation results prove that for a bandgap reference voltage (VBG) of 823 mV and temperature range from −40 °C to 125 °C; dc PSRR of 71 dB, maximum Temperature Coefficient of 12.5 ppm/K and current consumption of 33 µA are obtained.
一种新的低电压带隙参考拓扑
本文提出并分析了一种新的低电压带隙电压参考电路拓扑结构,并给出了仿真结果。低压带隙参考应用的传统拓扑需要一个运算放大器作为反馈放大器。新的拓扑结构采用自偏置跨阻放大器结构,降低了电流消耗。采用0.18µm标准CMOS技术设计了两种具有所提出拓扑结构的电路版本,其最小电源电压分别为1.2 V和1.5 V。仿真结果证明,对于带隙参考电压(VBG)为823 mV,温度范围为- 40°C ~ 125°C;直流PSRR为71 dB,最大温度系数为12.5 ppm/K,电流消耗为33µA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信