Scaling Trends and the Effect of Process Variations on the Soft Error Rate of advanced FinFET SRAMs

Abstract

Scaling trends in the alpha-particle and neutron induced SRAM SER shows an increase in the per-bit SER and percent multi-cell upsets at the 5-nm FinFET process compared to the 7-nm process. Neutron SER tests across process corners show that the faster process corner SER is up to $2\times$ higher than the slower process corner SER in 7-nm and 5-nm FinFETs. The process corner dependence of SER is attributed to differences in propagation delay and single-event transient pulse-widths.