{"title":"A 2.1 µW 76 dB SNDR DT-ΔΣ modulator for medical implant devices","authors":"Ali Fazli Yeknami, A. Alvandpour","doi":"10.1109/NORCHP.2012.6403118","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power 2nd-order discrete-time (DT) ΔΣ analog-to-digital converter (ADC) aimed for medical implant devices. The designed ΔΣ modulator with two active integrators (filters) employs power-efficient two-stage load-compensated OTAs with minimal load and rail-to-rail output swing, which provides higher power-efficiency than the two-stage Miller OTA. The modulator, implemented in a 65nm CMOS technology with a core area of 0.033 mm2, achieves 76-dB peak SNDR over a 500 Hz signal bandwidth, while consuming 2.1 μW from a 0.9 V supply voltage. Compared to previously reported modulators for such signal bandwidths, the achieved performance (FOM of 0.4 pJ/step) make the presented modulator one of the best among sub-1-V modulators in term of most commonly used figure of merit.","PeriodicalId":332731,"journal":{"name":"NORCHIP 2012","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NORCHIP 2012","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2012.6403118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a low-power 2nd-order discrete-time (DT) ΔΣ analog-to-digital converter (ADC) aimed for medical implant devices. The designed ΔΣ modulator with two active integrators (filters) employs power-efficient two-stage load-compensated OTAs with minimal load and rail-to-rail output swing, which provides higher power-efficiency than the two-stage Miller OTA. The modulator, implemented in a 65nm CMOS technology with a core area of 0.033 mm2, achieves 76-dB peak SNDR over a 500 Hz signal bandwidth, while consuming 2.1 μW from a 0.9 V supply voltage. Compared to previously reported modulators for such signal bandwidths, the achieved performance (FOM of 0.4 pJ/step) make the presented modulator one of the best among sub-1-V modulators in term of most commonly used figure of merit.