Piezoelectric/magnetostrictive MEMS resonant sensor array for in-plane multi-axis magnetic field detection

Hoe-Joon Kim, Sibo Wang, Changting Xu, D. Laughlin, Jingxi Zhu, G. Piazza
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引用次数: 8

Abstract

This paper reports the demonstration of an array of piezoelectric/magnetostrictive micro electromechanical system (MEMS) magnetic resonant sensors (PM-MRS) for multi-axis magnetic field (H-field) detection. An array of 43 MHz aluminum nitride (AlN) piezoelectric resonators vibrating along different in-plane directions (θ) but coated with a magnetostrictive layer (Fe65.6Co9.4B25) with the same easy axis (EZ) exhibit unique mechanical/ electrical responses as a function of the applied H-field and its direction, enabling a high resolution multi-axis H-field detection. The sensor design yields resonators with a high quality factor (Q ∼ 1500) and electromechanical coupling coefficient (kt2 ∼ 2%) — the highest value ever reported for an AlN PM-MRS. This sensor system paves the way for low power magnetometers that enables single-chip multi-axis H-field detection.
面向面内多轴磁场检测的压电/磁致伸缩MEMS谐振传感器阵列
本文报道了一种用于多轴磁场检测的压电/磁致伸缩微机电系统(MEMS)磁谐振传感器(PM-MRS)阵列的演示。43 MHz氮化铝(AlN)压电谐振器阵列沿不同面内方向(θ)振动,但涂有具有相同易轴(EZ)的磁致伸缩层(Fe65.6Co9.4B25),表现出独特的机械/电响应,作为施加h场及其方向的函数,实现了高分辨率的多轴h场检测。传感器设计产生具有高质量因子(Q ~ 1500)和机电耦合系数(kt2 ~ 2%)的谐振器,这是迄今为止报道的AlN PM-MRS的最高值。该传感器系统为实现单芯片多轴h场检测的低功率磁强计铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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