Aqueous electrolyte system for porous silicon using electrochemical anodization

K. Manoj, Mukul Dubey, B. Bills, I. Al-Qaradawi, B. Lamsal, D. Galipeau, Q. Fan
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引用次数: 3

Abstract

Electrochemical anodization on n-type silicon was performed with silicon as anode and platinum as cathode in a weak-acid aqueous electrolyte containing orthophosphoric acid and ammonium fluoride. Anodization was carried out in two different modes, i.e., potentiostatic and galvanostatic with the voltage and current density of 5-80 V and 10-50 mA/cm2 respectively. Anodization time was varied from 5 min to 10 hours. Morphology of the anodized samples was studied using scanning electron microscopy (SEM), revealing the formation of pores with uniform distribution throughout the silicon substrate. The pore size and density were controllable by varying the anodization voltage and current. Results showed that, in a broad spectrum range of 400-1100 nm, the total reflectance (sum of diffused and specular reflectance) of the porous silicon was about 10% compared to >30% of the as-received silicon wafer. The porous silicon is promising for solar cell applications due to the low reflection loss.
用电化学阳极氧化制备多孔硅的水电解质体系
在含有正磷酸和氟化铵的弱酸水溶液中,以硅为阳极,铂为阴极对n型硅进行了电化学阳极氧化。阳极氧化在恒电位和恒流两种不同的模式下进行,电压和电流密度分别为5-80 V和10-50 mA/cm2。阳极氧化时间从5分钟到10小时不等。利用扫描电子显微镜(SEM)研究了阳极氧化样品的形貌,发现在硅衬底上形成了均匀分布的孔隙。通过改变阳极氧化电压和电流,可以控制其孔径和密度。结果表明,在400 ~ 1100 nm的广谱范围内,多孔硅的全反射率(漫反射和镜面反射之和)约为10%,而接收硅片的全反射率约为30%。多孔硅具有反射损耗小的特点,在太阳能电池中应用前景广阔。
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