High-throughput deeply-etched scanning Michelson interferometer on-chip

B. Mortada, Y. Sabry, M. Nagi, Khaled Hassan, B. Saadany, T. Bourouina, D. Khalil
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引用次数: 24

Abstract

A miniaturized scanning Michelson interferometer is demonstrated on-chip using a deep-etching process. Etching depths larger 300 μm were obtained with side-wall angle better than 0.1 degree and scalloping depth smaller than 60 nm. Multi-mode optical fibers with core diameters of 62.5 μm and 200 μm were used for delivering the white light to SOI chips with device layer heights of 90 μm and 200 μm for evaluating the improvement with larger depth. The resulting interferograms were compared showing 12-dB increase in the signal, which is a significant boost for the signal-to-noise ratio. The presented interferometer opens the door for the use of miniaturized instruments in practical applications.
片上高通量深蚀刻扫描迈克尔逊干涉仪
一个小型化的扫描迈克尔逊干涉仪演示了芯片上使用的深度蚀刻工艺。刻蚀深度大于300 μm,侧壁角大于0.1°,扇贝深度小于60 nm。采用芯径分别为62.5 μm和200 μm的多模光纤,分别向器件层高为90 μm和200 μm的SOI芯片输出白光,以评价更大深度下的改善效果。对比得到的干涉图,信号增加了12db,显著提高了信噪比。该干涉仪为微型化仪器的实际应用打开了大门。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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