A W-Band (75 to 110 GHz) Broadband Microstrip Phase Shifter

Abstract

This paper presents the design and performance of a W-band wideband microstrip 11.25-degree. 1-bit phase shifter using PIN diodes and loaded line technique. State-of-the-art results of 0.9± 0.5 dB insertion loss and ±1.3-degree phase error over the 79 to 92-GHz range have been achieved. Only 1.5 mA per diode and O V are required in the forward and reverse bias states, respectively, for optimum insertion losses. These results demonstrate a significant advance in the millimeter-wave phased array technology.