The solid solutions (AIII) PxAs1−x: Mechanism of formation the V group sublattise composition

Abstract

The influence of substrate temperature, density of As₂, P₂ molecules and Ga atoms flows on solid solutions AlP_xAs_1-x(001), GaP_xAs_1-x(001) and InP_xAs_1-x(001) composition at molecular-beam epitaxy (MBE) was investigated. The analysis of experimental data obtained in a wide range of growth conditions was carried out. The results of analysis are presented as a kinetic model describing the formation process of solid solution (A^III)P_xAs_1-x composition by MBE. The model can be used in the choice of growth conditions for solid solutions (A^III)P_xAs_1-x(001) layers with a set part of phosphor.