Properties of CoolMOS/sup TM/ between 420 K and 80 K-the ideal device for cryogenic applications

Abstract

The electrical properties of CoolMOS/sup TM/, the first representative of a new generation of power MOSFETs, based on the concept of charge compensation, were investigated at temperatures between 80 K and 423 K. Since it unifies all the advantages of MOSFETs, where additionally higher current densities are possible, the device is not only very attractive for power electronic systems at ambient temperatures, but also for cryogenic temperatures T>77 K.