V/sub th/ control of t/sub pd/-degradation-free FD SOI MOSFET with extremely thin BOX using variable body-factor scheme

Abstract

A new bias scheme of variable-/spl gamma/ FD SOI MOSFET is proposed. Using the scheme, almost no degradation of t/sub pd/ in the active-state is achieved even in the t/sub BOX/ of a sub-10 nm while I/sub off/ is sufficiently suppressed in the standby-state. Reducing the inter-die V/sub th/ fluctuation on a wide V/sub sub/ range in the active-state is realized. This device scheme is also well applicable to 3D channel MOSFETs including a FinFET.