Farhana Parveen, Shaahin Angizi, Zhezhi He, Deliang Fan
{"title":"Low power in-memory computing based on dual-mode SOT-MRAM","authors":"Farhana Parveen, Shaahin Angizi, Zhezhi He, Deliang Fan","doi":"10.1109/ISLPED.2017.8009200","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a novel Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) array design that could simultaneously work as non-volatile memory and implement a reconfigurable in-memory logic (AND, OR) without add-on logic circuits to memory chip as in traditional logic-in-memory designs. The computed logic output could be simply read out like a normal MRAM bit-cell using the shared memory peripheral circuits. Such intrinsic in-memory logic could be used to process data within memory to greatly reduce power-hungry and long distance data communication in conventional Von-Neumann computing systems. We further employ in-memory data encryption using Advanced Encryption Standard (AES) algorithm as a case study to demonstrate the efficiency of the proposed design. The device to architecture co-simulation results show that the proposed design can achieve 70.15% and 80.87% lower energy consumption compared to CMOS-ASIC and CMOL-AES implementations, respectively. It offers almost similar energy consumption as recent DW-AES implementation, but with 60.65% less area overhead.","PeriodicalId":385714,"journal":{"name":"2017 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLPED.2017.8009200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
In this paper, we propose a novel Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) array design that could simultaneously work as non-volatile memory and implement a reconfigurable in-memory logic (AND, OR) without add-on logic circuits to memory chip as in traditional logic-in-memory designs. The computed logic output could be simply read out like a normal MRAM bit-cell using the shared memory peripheral circuits. Such intrinsic in-memory logic could be used to process data within memory to greatly reduce power-hungry and long distance data communication in conventional Von-Neumann computing systems. We further employ in-memory data encryption using Advanced Encryption Standard (AES) algorithm as a case study to demonstrate the efficiency of the proposed design. The device to architecture co-simulation results show that the proposed design can achieve 70.15% and 80.87% lower energy consumption compared to CMOS-ASIC and CMOL-AES implementations, respectively. It offers almost similar energy consumption as recent DW-AES implementation, but with 60.65% less area overhead.