Influence of arcing conditions on post-arc dielectric strength recovery of VCB—Simulation based on an improved CTM

Shengwen Shu, J. Ruan, Daochun Huang, Gao-bo Wu
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引用次数: 2

Abstract

For vacuum circuit breaker (VCB), the contact surface temperature is still high after high current arcing, evaporation of metal vapor continues with considerable rates. The metal vapor and residual charge at current zero, i.e., the arc memory which depends on arcing conditions, determines the post-arc dielectric strength recovery of VCB. Considering the well-known continuous transition model (CTM) proposed by Andrews and Varey only shows the effect of residual charge on dielectric strength during sheath expanding period, thus, a submodel including metal vapor density and breakdown criteria corresponding to Paschen limit is added to the existing CTM. Moreover, it has taken into account the charge exchange between ions and vapor atoms. Its accuracy is verified by comparing simulation result with test and the other simulation data. Then based on the improved CTM, influence of arcing conditions including arcing time t0, interrupted current amplitude ip and ramp di/dt on the post-arc dielectric strength recovery of VCB are simulated and analyzed.
电弧条件对vcb电弧后介电强度恢复的影响——基于改进CTM的仿真
对于真空断路器(VCB)来说,大电流电弧后接触面温度仍然很高,金属蒸气继续以相当的速度蒸发。零电流下的金属蒸气和残余电荷,即依赖于电弧条件的电弧记忆,决定了压断路器的弧后介电强度恢复。考虑到Andrews和Varey提出的著名的连续过渡模型(CTM)只显示了鞘层膨胀期间残余电荷对介电强度的影响,因此在现有的CTM基础上增加了包含金属蒸气密度和对应Paschen极限的击穿准则的子模型。此外,它还考虑了离子与蒸汽原子之间的电荷交换。将仿真结果与试验及其它仿真数据进行对比,验证了其准确性。然后,基于改进的CTM,模拟分析了电弧时间t0、中断电流幅值ip和斜坡di/dt等电弧条件对VCB电弧后介电强度恢复的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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