Process Development of Fan-Out with Multi-layer RDL for Chiplets Packaging

Hsiao Hsiang-Yao, David Ho Soon Wee, S. Ps
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引用次数: 1

Abstract

In this paper, the fabrication process flow and results of a High-Density Fan Out Wafer Level Packaging for Chiplets packaging were presented. Fan-out Chiplets package has a 34.2×26.7 mm2 package size, which includes five layers of 2 µm line and space (L/S) redistribution layers (RDLs). The passivation layer includes 2 µm thickness and the diameter of 3um vias. High density and fine pitch RDLs were used to lay out the Advanced Interface Bus (AlB) connection to numerous channels between chiplets and chiplets. Fan-out chiplets packaging using RDL-1st process flow and a laser de-bonding technique. The fan-out chiplets packaging fabrication process and the Chip to wafer (C2W) assembly process were demonstrated.
小晶片封装用多层RDL扇出工艺开发
本文介绍了一种高密度扇出晶圆级封装的工艺流程和结果。Fan-out Chiplets封装尺寸为34.2×26.7 mm2,包含5层2µm的线与空间(L/S)再分配层(rdl)。钝化层厚度为2µm,通孔直径为3um。高密度和细间距rdl用于布置高级接口总线(AlB)连接,以连接小芯片与小芯片之间的众多通道。采用rdl -1工艺流程和激光脱粘技术的扇形小片封装。演示了扇形小片封装制造工艺和芯片到晶圆(C2W)组装工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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