A 750MS/s NMOS latched comparator

D. Soo, A. Voshchenkov, G. Chin, V. Archer, M. Lau, M. Morris, P. Ko, R. Meyer, B. Wooley
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引用次数: 7

Abstract

THIS PAPER WILL DESCRIBE THE DESIGN of analog circuits integrated in a polysilicon gate NMOS technology with lp effective channel length devices’. In particular, a latched comparator with 4b input resolution at 750MS/s and a wideband amplifier with l0dB of voltage gain over a bandwidth of 1.25GHz, when driving 130fF of on-chip capacitance, will be reported. The comparator was designed primarily for application to high-speed flash A/D conversion, but is is also suitable for use in integrated broadband fiber optic receivers. Its circuit configuration differs from previous in that negative feedback is used in the preamplifier section to trade gain for bandwidth.
一个750MS/s的NMOS锁存比较器
本文将描述一种集成在多晶硅栅极NMOS技术中的模拟电路的设计,该技术具有lp有效通道长度器件。特别是,将报道一个在750MS/s下具有4b输入分辨率的锁存比较器和一个在1.25GHz带宽上具有10db电压增益的宽带放大器,当驱动130fF片上电容时。该比较器主要用于高速闪存A/D转换,但也适用于集成宽带光纤接收器。它的电路配置与以前的电路不同,因为在前置放大器部分使用负反馈来交换带宽增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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