LIM Algorithms for MOSFET Models

Abstract

This paper introduces algorithms for the simulation of MOSFETS using the latency insertion method (LIM). The algorithms are independent of the MOSFET model level chosen and account for current and charge effects. The latency insertion method (LIM) has been demonstrated as an optimum algorithm for the transient simulation of large networks. In particular, we address the generation of the update equations. Examples and comparisons are given for evaluating the algorithms.