Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits

Abstract

We report a general model that allow us to analyze and simulate the steady and transient behavior of the leakage current between near devices in III-V integrated circuits. The model assumes the existence of a non-linear generation recombination process, impact ionization of deep traps, causing a non-equilibrium phase transition between a high resistive state and a conductive one.