Study the Sensing Performance with Catalytic Metals of Passivated InAlN/GaN Schottky Diode Gas Sensor

Abstract

In this proposed work, InAlN/GaN Schottky hetero-structure diode has been inspected using a physics-based analytical modeling approach for highly linear and sensitive gas sensing applications. Here, the hetero-interface and surface attributes are taken into considerations. The device is primarily modeled using 2-DEG’s reliance on the surface charges, which is reliant on the Sc2O3 passivation layer. The electrode of the gas sensor plays a key part in determining the sensitivity and other vital parameters of the sensors. The proposed structure of the Schottky diode with catalytic electrodes such as Pd, Pt, and other metals on GaN-based sensors has been studied. A Silvaco TCAD simulation tool is used to simulate the Schottky diode-based sensor model and we obtained I-V curves in the presence of different gas concentrations. On biasing voltage of 0.95 V, the I-V curves show a response of nearly 75% in the influence of 500 ppm gas concentration. Also, we observed the change in the sensor response with the temperature at different gas concentrations for various Schottky contacts.