Ultrafast and Accurate Proximity Effect Correction of Large-Scale Electron Beam Lithography based on FMM and SaaS

C. Hou, Wenze Yao, Wei Liu, Yiqin Chen, H. Duan, Jie Liu
{"title":"Ultrafast and Accurate Proximity Effect Correction of Large-Scale Electron Beam Lithography based on FMM and SaaS","authors":"C. Hou, Wenze Yao, Wei Liu, Yiqin Chen, H. Duan, Jie Liu","doi":"10.1109/IWAPS51164.2020.9286816","DOIUrl":null,"url":null,"abstract":"This paper proposes a fast proximity effect correction (PEC) methodology based on fast multipole method (FMM), to simultaneously achieve high calculation speed and accuracy. It is shown that the proposed methodology has both linear computational time complexity, $O(N)$, where $N$ is number of pixels, and linear parallelization speedup on multiple central processing unit (CPU) cores. These linear scaling scenarios are ideal traits for PEC of large-scale electron beam lithography (EBL). The proposed methodology has been implemented using C++ and OpenMP programming tools, and freely available via the Software-as-a-Service (SaaS) mode (http://hnupecsvl.qicp.vip).","PeriodicalId":165983,"journal":{"name":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Workshop on Advanced Patterning Solutions (IWAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWAPS51164.2020.9286816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This paper proposes a fast proximity effect correction (PEC) methodology based on fast multipole method (FMM), to simultaneously achieve high calculation speed and accuracy. It is shown that the proposed methodology has both linear computational time complexity, $O(N)$, where $N$ is number of pixels, and linear parallelization speedup on multiple central processing unit (CPU) cores. These linear scaling scenarios are ideal traits for PEC of large-scale electron beam lithography (EBL). The proposed methodology has been implemented using C++ and OpenMP programming tools, and freely available via the Software-as-a-Service (SaaS) mode (http://hnupecsvl.qicp.vip).
基于FMM和SaaS的大型电子束光刻接近效应超快速精确校正
本文提出了一种基于快速多极子法的快速接近效应校正方法,以同时获得较高的计算速度和精度。结果表明,所提出的方法具有线性计算时间复杂度$O(N)$,其中$N$为像素数,并且在多个中央处理器(CPU)内核上具有线性并行化加速。这些线性缩放场景是大规模电子束光刻(EBL)中PEC的理想特性。所提出的方法已使用c++和OpenMP编程工具实现,并可通过软件即服务(SaaS)模式免费获得(http://hnupecsvl.qicp.vip)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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