A high gain fully integrated CMOS LNA for WLAN and Bluetooth application

Abstract

In this paper a 1.8 V, 2.4 GHz CMOS fully integrated low noise amplifier (LNA) has been implemented in 0.18 μm RF CMOS process for Wireless Local Area Net (WLAN) and Bluetooth band. Acceptable consumption with higher voltage and power gain are achieved using traditional cascode configuration. In this configuration, we successed to have a good trade off among noise, gain, and stability. In order to achieve good input matching for narrow bandwidth the inductive source degeneration LNA topology is used. The LNA power gain is 22.1 dB, noise figure is 1.47 dB and the power consumption is 11 mW from a single 1.8 V power supply.