Electrical characteristics of GS-TSV in slow wave mode

Fengjuan Wang, G. Wang, N. Yu
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Abstract

The electrical characteristics of signal-ground through-silicon-via (GS-TSV) in slow-wave mode are analyzed according to microwave theory and simulated by ADS software. The results show that with the increasing radius of TSV, the transmission characteristic is getting better and better, however, with increasing height of TSV, the transmission characteristic of TSV becomes worse within the range from 0 to 15GHz.
慢波模式下GS-TSV的电特性
根据微波理论分析了慢波模式下信号接地通硅孔(GS-TSV)的电特性,并利用ADS软件进行了仿真。结果表明:在0 ~ 15GHz范围内,随着TSV半径的增加,TSV的传输特性越来越好,但随着TSV高度的增加,TSV的传输特性变得越来越差。
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