Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

S. Tanakamaru, M. Doi, K. Takeuchi
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引用次数: 23

Abstract

The system-level reliability of solid-state drives (SSDs) is investigated with 1X, 2X and 3Xnm NAND flash memories. The reliability degradation of NAND with scaling is an serious issue. Advanced ECC with signal processing such as error-prediction low-density parity-check (EP-LDPC) and error recovery (ER) scheme will be needed in the future SSDs. In this paper, the NAND reliability information used for EP-LDPC and ER is examined. System-level reliability with conventional ECC and EP-LDPC is measured.
用于固态硬盘(ssd)系统级可靠性改进的1X、2X和3Xnm NAND闪存误差预测分析
采用1X、2X和3Xnm NAND闪存研究固态硬盘(ssd)的系统级可靠性。NAND存储系统的可靠性随扩展而下降是一个严重的问题。未来的固态硬盘将需要具有错误预测低密度奇偶校验(EP-LDPC)和错误恢复(ER)方案等信号处理的高级ECC。本文研究了用于EP-LDPC和ER的NAND可靠性信息。采用常规ECC和EP-LDPC对系统级可靠性进行了测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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