Dynamics of Modulation Instability in Terahertz Range in Different Nonlinear Materials under Focusing

V. Grimalsky, Y. Rapoport, S. Koshevaya, J. Escobedo-Alatorre
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Abstract

It is investigated the formation of regular sequences of short envelope pulses in terahertz range in different nonlinear crystals due to the modulation instability. The cases of the nonlinear paraelectrics and narrow-gap semiconductors are considered. The initial focusing of the input long pulses is applied. In paraelectrics the modulation instability occurs in the longitudinal direction only whereas in the narrow-gap semiconductors it takes place in all directions. It is shown that in the nonlinear paraelectrics the approximation of the pure cubic nonlinearity is satisfactory for a description of the modulation instability. In the nonlinear semiconductor plasma it is necessary to take into account the saturation of nonlinearity. There exists some interval of amplitudes of the input pulses where the formation of the regular sequences of short pulses is possible.
聚焦作用下不同非线性材料在太赫兹范围内的调制不稳定性动力学
研究了在不同的非线性晶体中,由于调制不稳定性,在太赫兹范围内形成规则序列的短包络脉冲。考虑了非线性类电子器件和窄间隙半导体器件的情况。对输入的长脉冲进行初始聚焦。在准电学中,调制不稳定性只发生在纵向上,而在窄间隙半导体中,调制不稳定性发生在所有方向上。结果表明,在非线性准电性中,纯三次非线性近似可以满足对调制不稳定性的描述。在非线性半导体等离子体中,必须考虑非线性的饱和。在输入脉冲的某个振幅区间内,短脉冲的规则序列的形成是可能的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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